THE THERMAL PROCESSING INFLUENCE ON CURRENT-VOLTAGE CHARACTERISTIC AND INJECTION PROPERTIES OF HETEROJUNCTIONS
DOI:
https://doi.org/10.15588/1607-3274-2018-2-1Keywords:
barrier transition, current-voltage characteristic, barrier height, non-ideality factor, injection coefficientAbstract
Context. Nowadays the research and development of heterojunctions are carried out to search new metal-gallium arsenide compositions,the development of technological regimes which could ensure the microwave devices with Schottky barriers parameters reproducibility.
Comparing to gold, silver has a large thermal and electrical conductivity, a relatively small diffusion coefficient to gallium arsenide, which
makes it possible to reduce the transition layer thickness. The transition to silver-based metallization should improve the products technical
characteristics. The technological regimes development for manufacturing improved silver-based heterojunctions to GaAs is relevant from scientific and practical points of view.
Objective. The goal of the work is to determine the heat treatment influence on real current-voltage characteristics and the injection
coefficient value of the Ag/n-n+GaAs heterojunction.
Method. The heterojunctions manufacturing method is vacuum thermal evaporation. The calculation of the heterojunction parameters
was made by the current-voltage characteristics method.
Results. The GaAs-substrate chemical treatment regime is recommended. The heat treatment effect on the Ag/n-n+GaAs heterojunctions parameters and characteristics is studied. The barrier height influence on the injection coefficient value was investigated. Various methods for determining the Schottky barrier height and the nonideality factor for the current-voltage characteristics have been examined and tested.
Conclusions. It is established that the annealing temperature increase up to 803 K gives the highest barrier height for the Ag/n-n+GaAs
heterojunction with a donor density of ND=2 1016 cm–3 into epitaxial layer. It has been established that the most accurate method for the
heterojunction parameters determining using the current-voltage characteristic is the direct approximation method, which takes into account the effect of the series resistance in determining the nonideality factor and the Schottky barrier height. The calculated injection coefficients for heterojunctions with different Schottky barrier heights, obtained at different annealing temperatures, have very small values, therefore, hole injection can be neglected.
References
Belous A. Y., Solodukha V. A., Shvedov S. V. Kosmycheskaya elektronyka : v 2 kn. Kn. 2. Moscow, Tekhnosfera, 2015, 489 p.
Platonov S. V., Permyakov N. V., Seleznev B. Y. i dr.
Maloshumyashchye arsenyd-hallyevye usylytely pry vozdeystvyy elektromahnytnykh pomekh povyshennykh yntensyvnostey [Elektronny resurs], Vestnyk Novhorodskoho hosudarstvennoho unyversyteta, 2012, No. 67, pp. 29–32. Rezhym dostupa k resursu:
http://www.novsu.ru/file/1010219
Kol’tsov H. Y., Dydenko S. Y., Cherny’kh A. V. i dr. Kontakty Shottky k vysokoomnыm epytaksyal’nыm sloyam GaAs dlya detektorov chastyts y kvantov [Elektronny resurs], Fyzyka y tekhnyka poluprovodnykov, 2012, No. 8, pp. 1088–1093.
Rezhym dostupa k resursu: http://journals.ioffe.ru/articles/viewPDF/7776
Dmytryev V. S., Shvets E. Ya. Tekhnolohycheskye osobennosty yzhotovlenyya usylytelya behushchey volny, Sbornyk materyalov 10-y mezhdunarodnoy molodezhnoy nauchno-tekhnycheskoy
konferentsyy «Sovremenny’e problemy’ radyotekhnyky y
telekommunykatsyy «RT–2014». Sevastopol’, SevNTU, 2014, P. 158. (ISBN 978-617-612-072).
Dmytriyev V. S. Inzhektuyuchi bar’yerni perekhody na osnovi arsenidu haliya dlya priladiv NVCH diapazonu, Prohresivni tekhnolohiyi ta prylady, 2017, Vyp. 10(1), pp. 50–53, ISSN 2313-5352
Hern ndez M. P., Alonso C. F., Pe a J. L. Barrier height
determination in homogeneous nonideal Schottky contacts, Journal of Physics D: Applied Physics, 2001, Vol. 34, No. 8, pp. 1157–1162.
Torkhov N. A. Priroda pryamykh i obratnykh tokov
nasyshcheniya v kontaktakh metall-poluprovodnik s baryerom Shottki, Fizika i tekhnika poluprovodnikov, 2010, Vol. 44, No. 6, pp. 767–774.
Chand S., Kamar L. Origin of non-ideal current-voltage characteristics of metal-semiconductor contact: A numerical study [Електронний ресурс], Indian Journal of Engineering &Materials Sciences, 2000, Vol. 7, No. 5–6, pp. 268–273. Режим доступу до ресурсу: http://nopr.niscair.res.in/bitstream/123456789/24409/1/IJEMS%207%285-6%29%20268-273.pdf.
Zuyev S. A., Kilessa G. V., Asanov E. E. i dr. Zavisimost provodimosti ot tolshchiny aktivnoy oblasti v tonkoplenochnykh diodakh Shottki na GaAs [Elektronny resurs], Fizika i tekhnika poluprovodnikov, 2016, Vol. 50, No. 6, pp. 825–829. Rezhim dostupu do resursu: http://journals.ioffe.ru/articles/viewPDF/43212
Bozhkov V. G., Shmargunov A. V. Vliyaniye nelineynoy zavisimosti vysoty baryera ot smeshcheniya na izmeryaemye parametry kontaktov s baryerom Shottki [Elektronny resurs], Materialy 21-y Mezhd. Krymskoy konf. “SVCh tekhnika i telekommunikatsionnye tekhnologii” (KryMiKo – 2011).
Sevastopol, 10–14 sentyabrya 2011. Sevastopol, SevNTU, 2011, pp. 246–247. Rezhim dostupu do resursu: http://
naukainform.kpi.ua/CriMiCo/Crimico/2011/246_247.pdf
Sze S. M., Ng K. K. Physics of Semiconductor Devices, 3rd Edition. Hoboken, A John Wiley & Sons, Inc., 2007, 815 р.
Dmitriev V. S., Shvets E. Y. The effect of the injected minority carriers on the parameters of Schottky barrier diodes, Zb. tez dopovide- mizhnar. nauk.-tekhn. konf. «Fundamental’ni ta prikladni problemi suchasnikh tekhnolohi-». Ternopil, TNTU, 2015, pp. 10–11.
Jayavel P., Kumar J., Ramasam P., Premanand R. On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs [Elektronny resurs], Indian Journal of Engineering and Materials Sciences, 2001, Vol. 7, No. 5–6, pp. 340–343. Rezhim dostupu
do resursu: http://nopr.niscair.res.in/itstream/123456789/24425/1/IJEMS%207%285-6%29%20340-343.pdf
Weber E. R., Washburn J. Structure and reliability of Metal contacts to GaAs. Berkeley, CA: Оffice of naval research ADA259 184, Department of Materials Science and Mineral Engineering University of California, 1991, 41 р.
Dmstriyev V. S., Dmstriyeva L. B.; zayavnyk i patentovlasnsk Zaporiz’ka derzhavna inzhenerna akademiya. Pat. 95094 Ukrayina, MPK H 01 L 29/47. Sposib vihotovlennya kontaktiv z bar‘yerom Shotky na arsenidi haliyu. № u201407081; zayavl. 23.06.14; opubl. 10.12.14, Byul. № 23/2014.
Dmytryev V. S. Razvytye fyzycheskoy modely neodnorodnыkh kontaktov metall-poluprovodnyk, Materialy X mezinarodni v decko-prakticka konference «Moderni vymo enosti v dy-2014». Praha, Publishing House «Education and Science», 2014, Dil 39 «Technicke v dy», pp. 3–5. (ISBN 978-966-8736-05-6).
Belyaev A. V., Boltovets N. S., Venger Ye. F. i dr. Pod red. prof. Belyaeva A. Ye., prof. Konakovoy R. V. Fizicheskiye metody diagnostiki v mikro- i nanoelektronike. Kharkov, ISMA, 2011,
p.
Rhoderick E. H., Williams R. H. Metal-Semiconductor Contacts. Oxford, Clarendon Press, 1988, 252 p.
Kudryk Ya. Ya., Shynkarenko V. V., Slipokurov V. S., Bigun R. I., Kudryk Ya. Ya. Methods for determination of Schottky barrier height from I–V curves, CriMiCo’2014, September 7–13, 2014.
Sevastopol, Crimea, pp. 673–674.
Ferhat-Hamida A., Ouennoughi Z., Hoffmann A., Weiss R. Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method [Elektronny resurs], Solid-State Electronics, 2002, Vol. 46, No. 5, pp. 615– 619. Rezhim dostupu do resursu: https://doi.org/10.1016/S0038-
(01)00337-9
Karaboga N., Kockanat S., Dogan H. The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony [Elektronny resurs], Applied Intelligence, 2013, Vol. 38, No. 3, pp. 279–288. Rezhim dostupu do resursu: https://link.springer.com/article/10.1007%2Fs10489-
-0372-x.
Ortiz-Conde A., Ma Y., Thomson J. etc Direct extraction of semiconductor device parameters using lateral optimization method [Elektronny resurs], Solid-State Electronics, 1999, Vol. 43, No. 4, pp. 845–848. Rezhim dostupu do resursu:
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