RESEARCH OF FEATURES THE FORMATION OF DEFECTS IN HIGHLY ALLOYING SILICON DURING IRRADIATED

Authors

  • A.Y. Nikonov Zaporizhzhia State Engineering Academy
  • O.Y. Nebesniuk Zaporizhzhia State Engineering Academy
  • S.L. Shmaly Zaporizhzhia State Engineering Academy
  • Z.A. Nikonova Zaporizhzhia State Engineering Academy

DOI:

https://doi.org/10.15588/1607-3274-2012-1-2

Keywords:

radiation, doping impurity, concentration.

Abstract

In the article the results of experimental research mechanisms interaction high-energy radiation on silicon.

Published

2012-07-10

How to Cite

Nikonov, A., Nebesniuk, O., Shmaly, S., & Nikonova, Z. (2012). RESEARCH OF FEATURES THE FORMATION OF DEFECTS IN HIGHLY ALLOYING SILICON DURING IRRADIATED. Radio Electronics, Computer Science, Control, (1). https://doi.org/10.15588/1607-3274-2012-1-2