FEATURES OF FORMATION OF BIPOLAR TRANSISTOR FOR IС WITH DIELECTRIC ISOLATION OF ELEMENTS

Authors

  • A. N. Gorban
  • V. V. Kravchina

DOI:

https://doi.org/10.15588/1607-3274-2013-1-4

Keywords:

complementary bipolar transistor, dielectric isolation, leak current, selective epitaxy

Abstract

The processes of a selective epitaxy of silicon layers on the structures Si-SiO2-Si*, formation of dielectric isolation and diffusive areas of complementary bipolar transistor structures are optimized in the work. Complete dielectric isolation of elements IC in episilicon is reached at the expense technology of the structures Si- SiO2-Si* association with the LOCOS technology. Oxidation of the border between layers epimono-Si and epi-Si* is formatted of complete dielectric isolation of elements IC. In this case the border is located at an angle 55° to the surface. In this case the gradient of mechanical tension is directed either to regional area of volume epimono-Si or to layer volume epi-Si * and appearance of mechanical tension, sufficient for emergence of defects in a layer epimono-Si doesn’t happen. Processes of emitter-region diffusion are optimized, which increased the factor of injection of p-n-p-transistors and improved similarity of characteristics of complementary transistors. Epitaxy layers being 3,0–4,0 mcm thick, breakdown tension Uce ≥ 20 V and β ≥ 60 .

References

Горбань, А. Н. Разработка конструкции и технологии комплементарных транзисторов для радиационностойких ИС /А. Н. Горбань, В. В. Кравчина // Технология и конструирование в электронной аппаратуре. – № 3. – 2011. – С. 23–27. 2. Способ изготовления кремниевых структур с диэлектрической изоляцией: а.c. № 1616445 CCCР, МКИ H01L 21/76 / Липко В. А., Макаренко Л. В., Трещун А. П., Кравчина В. В., Синеокий В. Н.; Заявитель и собственник патента: ОКБ «Элмис». – заявл. 26.09.1988. опубл. 22.08.1990. бюл. No. 15. – 1990. 3. Cпoсоб изготовления кремниевых структур с комбинированной диэлектрической изоляцией комплементарных транзисторов: патент на полезную модель №27068, Украина, МКИ H01L 21/70 / Костенко В. О., Кравчина В. В., Гомольский Д. М. ; заявитель и собственник патента : Запорожский национальный университет ; заявл. 2006. опубл. 2007, бюл. № 16. – 2007. 4. Способ изготовления интегральных микросхем с комплементарными транзисторами Декларационный пат. 29594А Украина, H01L 21/76 / Горбань А. Н., Кравчина В. В., Костенко В. О. ; Заявитель и собственник патента : Запорожский национальный технический университет. – заявл. 2003. опубл. 2004. бюл. № 8. – 2004. 5. Горбань, А. Н. Формирование полупровониковых приборов на КНИ структурах / А. Н. Горбань, В. В. Кравчина // Матеріали 1 Міжнародної науково-практичної конференції «Актуальні проблеми прикладної фізики», АППФ-2012, 24–28 вересня, Севастополь, Україна. – С. 61–62

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Published

2013-06-15

How to Cite

Gorban, A. N., & Kravchina, V. V. (2013). FEATURES OF FORMATION OF BIPOLAR TRANSISTOR FOR IС WITH DIELECTRIC ISOLATION OF ELEMENTS. Radio Electronics, Computer Science, Control, (1). https://doi.org/10.15588/1607-3274-2013-1-4

Issue

No. 1 (2013): Radio Electronics, Computer Science, Control

Section

Radio electronics and telecommunications

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Copyright (c) 2014 A. N. Gorban, V. V. Kravchina

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