COMPUTER MODELING OF FUNCTIONS FOR THE TRANSFORMATION OF OPTICAL SCHEMES OF MEASUREMENT OF TEMPERATURE CONSTRUCTED ON RAMAN EFFECT AND STRUCTURE OF THE ALGORITHM OF THEIR RESEARCH
DOI:
https://doi.org/10.15588/1607-3274-2018-3-3Keywords:
temperature measurement, spectra of combinational light scattering, Raman thermometerAbstract
Context. In the process of measuring the temperature for the frequency shift of the combination scattering of light there is aproblem of determining the equivalent frequency of the spectrum. This is manifested by the passage of reflected radiation through
optical elements, which is distorted by the errors of the complex frequency characteristics of these elements. Large error in
temperature determination is result of inaccurate definition of the equivalent frequency. Therefore, the synthesis of software models
of optical elements of optical circuits, as well as the spectrum of combinational light scattering for further research is relevant.
Objective – synthesis of models of elements of optical circuits and spectra of combination scattering of light. That makes it
possible to investigate the uncertainty of the transfer characteristics of the optical transformation function.
Method. Recently, various products and sensors, developed on the basis of micro and nanostructure materials, are widely used. A
number of electronic technology components are developed that are hundreds of times smaller than their predecessors. In the process
of manufacturing such miniature components of electronic technology need to carefully monitor the temperature. Characteristics of
existing measuring instruments do not fully meet these requirements. One of the promising directions for solving this problem is the
use of the method of combining light scattering. Two methods of determining the temperature are known in the framework of the
method of the combination scattering of light: the first with respect to the ratio of the integral area of the Stokes component of the
spectrum to the anti-Stokes, the second by the shift of the frequency of light scattering. The second method has a better performance
at least 2 times, since it is only necessary to determine the anti-Stokes component of the spectrum. Also, this method has a lesser
methodological error, which arises due to overheating of the object being studied by a laser. Therefore, this method and method for
further research was chosen.
Results. Synthesized computer models of optical components and optical circuits and Raman spectroscopy. Two methods for
determining the value of the equivalent frequency of an anti-Stokes component of the light scattering spectrum are proposed.
Conclusions. The conducted studies have shown that the primary circle of the optical circuitry does not make any errors in the
result of measuring the temperature at the shift of the frequency of the combination light scattering. It’s proven expedient to conduct
a study of the secondary circle of the optical circuit.
References
Blunt P. Reliable thyristors and triacs in TO220 plastic
packages, Electronic Components and Applications,
, Vol. 2, No. 1. pp. 53–58
Lozovskiy V. N., Lunin L. S., Popov V. P. Zonnaia perekristalizatsiia
gradientom temperatury′ poluprovodnikovy′
x materialov. Moscow, «Меtallurgiia», 1987. 223 p.
Anthony T. R., Boah J. K., Chang M. F. et al. Thermomigration
processing of isolation grids in power structures,
IEEE Transactions on Electron Devices, 1976, Vol. 23,
No. 8, pp. 818–823.
Chang M. Kennedy R., Chang M., Kennedy R. The application
of temperature gradient zone melting to silicon
wafer processing, J. Electrochem. Soc., 1981, Vol. 128,
No. 10, pp. 2193–2198.
Lischner D. J., Basseches H., D’Altroy F. A. Observations
of the Temperature gradient zone melting process
for isolating small devices, J. Electrochem. Soc.,
Vol. 132, No. 12, pp. 2997–3001.
Morillon B. et al. Realization of a SCR on an epitaxial
substrate using Al thermomigration, ESSDERC, 2002, pp.
–330.
Polukhin A. S., Zueva Т., Sоlоdоvnik А. I. Ispolzovanie
termomigratsii v tekhnologii struktur silovy′kh poluprovodnikovy′
x priborov, Silovaia elektronika, 2006, No. 3,
pp. 110–112.
Lozovskiy V. N., Lunin L. S., Seredin B. М. Osobennosti
legirovaniia kremniya metodom termomigratsii, Izvestiya
vy′sshikh uchebny′kh zavedeniy. Materialy′ elektronnoy
tekhniki, 2015, Vol. 18, No. 3, pp. 179–188.
Polukhin A. S. Тermomigratsiya neorentirovanny′kh lineyny′kh
zon v kremnievy′kh plastinakh (100) dlya proizvodstva chipov
silovy′kh poluprovodnikovy′x priborov, Kомpontnty′ i
tekhnologii, 2008, No. 11, pp. 97–100.
Deep trench etching combining aluminum thermomigration and
electrochemical silicon dissolution.
https://www.researchgate.net/publication/224403308_
Polukhin A. S. Issledovanie tekhnologicheskikh faktorov protsessa
termomigratsii, Silovaia elektronika, 2009, No. 2, pp. 90–
МОP-SBIS. Моdelirovanie elementov i tekhnologicheskikh
protsessov. Pod red. P. Аntonneti, D. Аntoniadisa, R. Dattona,
U. Оuldkhema : Per. s аngl Мoscow, Radio i svyaz, 1988.
Morillon B. Etude de la thermomigration de l’aluminium dans
le silicium pour la réalisation industrielle de murs d’isolation
dans les composants de puissance bidirectional, Rapport LAAS
№02460, 2002. 223 p.
Buchin E. J., Denisenko J. I., Simakin S. G. Structura
tekhnologicheskikh kanalov v kremnii, Pisma v GTF, 2004,
Vol. 30, Vy′p. 5, pp. 70–75.
Gorban А. N., Кravchinа V. V. Selekty′vne travlennya monokristalichnogo
kremniyu maskovannogo plivkamy′ nitridu, polikremniyu,
oky′su kremniyu tа ikh kompozy′tsiyamy′, Novi
tekhnologii, 2010, No. 1 (27), pp. 41–46.
Lozovskiy V. N., Lomov A. A., Seredin B. М., Simakin S. G.,
Zinchenko А. N., Seredina М. B. Termomigratsionny′e pkanaly′:
realnaya struktura i elektricheskie svoiystva, Elektronnaya
tekhnika.Seriya 2. Poluprovodnikovy′e pribory′, 2017,
Vy′p. 2 (245), pp. 29–38.
Downloads
How to Cite
Issue
Section
License
Copyright (c) 2018 Yu. P. Kryvenchuk, N. B. Shakhovska, О. B. Vovk, N. I. Melnykova
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.
Creative Commons Licensing Notifications in the Copyright Notices
The journal allows the authors to hold the copyright without restrictions and to retain publishing rights without restrictions.
The journal allows readers to read, download, copy, distribute, print, search, or link to the full texts of its articles.
The journal allows to reuse and remixing of its content, in accordance with a Creative Commons license СС BY -SA.
Authors who publish with this journal agree to the following terms:
-
Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License CC BY-SA that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
-
Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
-
Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work.